v rrm = 45 v - 100 v i f(av) = 500 a features ? high surge capability heavy three tower package ? isolation type package ? electrically isolated base plate ? not esd sensitive parameter symbol mbrta50045(r) mbrta50060(r) unit repetitive peak reverse voltage v rrm 45 60 v rms reverse voltage v rms 32 42 v ? types from 45 v to 100 v v rrm conditions 100 70 mbrta50045 thru MBRTA500100r MBRTA500100(r) 80 56 mbrta50080(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon power schottk y diode dc blocking voltage v dc 45 60 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol mbrta50045(r) mbrta50060(r) unit average forward current (per pkg) i f(av) 500 500 a maximum instantaneous forward voltage (per leg) 0.70 0.75 11 10 10 50 50 thermal characteristics thermal resistance, junction - case (per leg) r jc 0.30 0.30 c/w t c = 100 c 500 500 peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 3500 3500 3500 3500 100 80 ma v -55 to 150 -55 to 150 50 a -55 to 150 MBRTA500100(r) 11 mbrta50080(r) 0.30 t j = 150 c 0.30 0.84 0.84 50 t j = 25 c i fm = 250 a, t j = 25 c conditions -55 to 150 t j = 100 c 10 10 electrical characteristics, at tj = 25 c, unless otherwise specified reverse current at rated dc blocking voltage (per leg) i r v f www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbrta50045 thru MBRTA500100r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbrta50045 thru MBRTA500100r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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